Main / of Physics and Technology / Электроники и астрофизики / Жарекешев Иса Хасенович
Nationality: Kazakh.
Education: Moscow Institute of Physics and Technology, graduated in 1984.
Specialty: Engineer-Physicist.
Graduate School: A.F. Ioffe Physical-Technical Institute, Leningrad.
Defense of PhD thesis in 1990.
Specialty: Physics of Semiconductors and Dielectrics. Academic degree: Doctor of Physical and Mathematical Sciences (2010).
Specialty: Solid State Physics.
Academic rank: Associate Professor (2011).
Work experience: - 15 years of teaching.
- 21 years of research.
From 1990 to 1993 – Assistant Professor, Department of General Physics, Senior Lecturer, Leading Researcher, Al-Farabi Kazakh
State University.
From 1993 to 1996 – Senior Lecturer, Department of Solid State Physics, Al-Farabi Kazakh National University.
Since 1993 – a scholarship holder of the German Academic Exchange Service DAAD, Germany.
since 1995 – research specialist, lecturer at the University of Hamburg, Germany.
since 2000 – leading researcher, Ruhr University Bochum, Germany.
Since 2009 – Senior Research Fellow at the Research Institute of Experimental Physics, Al-Farabi Kazakh National University, Almaty
Since 2019 – Deputy Professor, Al-Farabi Kazakh National University, Almaty
Fields of expertise: solid-state physics, information technology, computer
physics, nanoelectronics, materials science.
Manager: 2 research projects in Germany (1995, 1997), responsible for executing
2 research projects in Germany (2002-2005). Author: 115 scientific publications, including 16 in Thomson Reuters and Scopus
rankings
H-index: 12
Languages: English, German, Russian.
Member: American Association for the Advancement of Science.
First higher education
Academic degree
Academic rank
| Name of academic title | Date of assignment |
|---|---|
| Доцент | 25/10/2011 |
1
Жарекешев Иса Хасенович
Nonperturbative scaling theory of free magnetic moment phases in disordered metals
2007 - г.
4 - стр.
99
2
Жарекешев Иса Хасенович
Influence of Nanocrystalline Silicon Conductivity on the Structural and Optical Properties of Porous Silicon
2024 - г.
6 - стр.
0
Scopus
Профиль автора
Clarivate Analytics Web of Science
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Google Scholar
Профиль автора
Scopus
Author Documents
Citations
H-index
15
473
10
Influence of Nanocrystalline Silicon Conductivity on the Structural and Optical Properties of Porous Silicon
Dikhanbayev, K., Zharekeshev, I., Zhambyl, A., Sagidolda, Y., Baspakova, Z., Khaniyev, B., Meirambekuly, N., Kozhagulov, Y., Zhumatova, S.
2024
Es Materials and Manufacturing
26, с.
4
ЦитированийNonperturbative scaling theory of free magnetic moment phases in disordered metals
Zhuravlev, A., Zharekeshev, I., Gorelov, E., Lichtenstein, A.I., Mucciolo, E.R., Kettemann, S.
2007
Physical Review Letters
99, с.
23
ЦитированийAdvanced Lanczos diagonalization for models of quantum disordered systems
Zharekeshev, I.K., Kramer, B.
1999
Computer Physics Communications
121, с. 502-504
2
ЦитированийParametric motion of energy levels in quantum disordered systems
Zharekeshev, I.K., Kramer, B.
1999
Physica A Statistical Mechanics and Its Applications
266, с. 450-455
5
ЦитированийCritical level statistics at the Anderson transition in four-dimensional disordered systems
Zharekeshev, I.K., Kramer, B.
1998
Annalen Der Physik Leipzig
7, с. 442-451
39
ЦитированийSpectral properties and localization of few interacting electrons in a one dimensional random potential
Halfpap, O., Zharekeshev, I.K., MacKinnon, A., Kramer, B.
1998
Annalen Der Physik Leipzig
7, с. 503-507
3
ЦитированийPhase diagram of localization in a magnetic field
Dröse, T., Batsch, M., Zharekeshev, I.K., Kramer, B.
1998
Physical Review B Condensed Matter and Materials Physics
57, с. 37-40
20
ЦитированийAsymptotics of universal probability of neighboring level spacings at the anderson transition
Kh. Zharekeshev, I., Kramer, B.
1997
Physical Review Letters
79, с. 717-720
117
ЦитированийScaling of level statistics and critical exponent of disordered two-dimensional symplectic systems
Schweitzer, L., Zharekeshev, I.K.
1997
Journal of Physics Condensed Matter
9, с. L441-L445
32
ЦитированийCrossover from critical orthogonal to critical unitary statistics at the anderson transition
Batsch, M., Schweitzer, L., Zharekeshev, K.K., Kramer, B.
1996
Physical Review Letters
77, с. 1552-1555
54
ЦитированийCrossover of level statistics between strong and weak localization in two dimensions
Zharekeshev, I.K., Batsch, M., Kramer, B.
1996
Europhysics Letters
34, с. 587-592
23
ЦитированийScaling of level statistics at the disorder-induced metal-insulator transition
Zharekeshev, I.K., Kramer, B.
1995
Physical Review B
51, с. 17239-17242
82
ЦитированийCritical level spacing distribution of two-dimensional disordered systems with spin-orbit coupling
Schweitzer, L., Zharekeshev, I.K.
1995
Journal of Physics Condensed Matter
7, с. L377-L381
21
ЦитированийUniversal fluctuations in spectra of disordered systems at the anderson transition
Zharekeshev, I.K., Kramer, B.
1995
Japanese Journal of Applied Physics
34, с. 4361-4364
41
ЦитированийDecimation algorithm for the statistics of energy levels
Batsch, M., Zharekeshev, I.K., Kramer, B.
1995
Solid State Communications
95, с. 353-356